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Two silicon nitride technologies for post-SiO 2 MOSFET gate dielectric

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Bibliographic Details
Published in:IEEE electron device letters 2001-07, Vol.22 (7), p.324-326
Main Authors: Qiang Lu, Yee Chia Yeo, Yang, K.J., Lin, R., Polishchuk, I., Tsu-Jae King, Chenming Hu, Song, S.C., Luan, H.F., Dim-Lee Kwong, Xin Guo, Zhijiong Luo, Xiewen Wang, Tso-Ping Ma
Format: Article
Language:English
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ISSN:0741-3106
1558-0563
DOI:10.1109/55.930679