Sub-40 nm SOI V-groove n-MOSFETs

We present output and transfer characteristics of single-gated, 36 nm, 46 nm and 56 nm channel length SOI MOSFETs with a V-groove design. For the shortest devices we find transconductances as high as 900 μS/μm and drive currents of 490 μA/μm at V/sub gs/ - V/sub th/=0.6 V. The V-groove approach comb...

Full description

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 2002-02, Vol.23 (2), p.100-102
Main Authors: Appenzeller, J., Martel, R., Avouris, Ph, Knoch, J., Scholvin, J., del Alamo, J.A., Rice, P., Solomon, P.
Format: Article
Language:English
Subjects:
Anisotropic magnetoresistance
Doping profiles
Electrons
Epitaxial growth
Etching
Fabrication
Ion implantation
Molecular beam epitaxial growth
MOSFET circuits
Silicon
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We present output and transfer characteristics of single-gated, 36 nm, 46 nm and 56 nm channel length SOI MOSFETs with a V-groove design. For the shortest devices we find transconductances as high as 900 μS/μm and drive currents of 490 μA/μm at V/sub gs/ - V/sub th/=0.6 V. The V-groove approach combines the advantages of a controlled, extremely abrupt doping profile between the highly doped source/drain and the undoped channel region with an excellent suppression of short-channel effects. In addition, our V-groove design has the potential of synthesizing devices in the 10 nm range.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.981319