High-speed and low-dark-current flip-chip InAlAs/InAlGaAs quaternary well superlattice APDs with 120 GHz gain-bandwidth product

High-speed flip-chip InAlAs/InAlGaAs quaternary well superlattice avalanche photodiodes grown by gas-source molecular beam epitaxy have been achieved with 120-GHz gain-bandwidth product. These photodiodes exhibit a maximum bandwidth of 15 GHz, 0.34- mu A dark current at a multiplication factor of 20...

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Bibliographic Details
Published in:IEEE photonics technology letters 1993-06, Vol.5 (6), p.675-677
Main Authors: Watanabe, I., Sugou, S., Ishikawa, H., Anan, T., Makita, K., Tsuji, M., Taguchi, K.
Format: Article
Language:English
Subjects:
Avalanche photodiodes
Bandwidth
Dark current
Indium compounds
Indium phosphide
Molecular beam epitaxial growth
Optical buffering
Optical receivers
Photoconductivity
Superlattices
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Summary:High-speed flip-chip InAlAs/InAlGaAs quaternary well superlattice avalanche photodiodes grown by gas-source molecular beam epitaxy have been achieved with 120-GHz gain-bandwidth product. These photodiodes exhibit a maximum bandwidth of 15 GHz, 0.34- mu A dark current at a multiplication factor of 20, a capacitance of 0.17 pF, 65% quantum efficiency, and a low breakdown voltage of about 20 V. A clear eye opening at a multiplication factor of 20 was obtained for 10-Gbs nonreturn to zero signals. This indicates that these devices have potential for high-speed, high-sensitivity and low-power-consumption, long-wavelength optical receivers.< >
ISSN:1041-1135
1941-0174
DOI:10.1109/68.219707