Low-threshold lasers fabricated by alignment-free impurity induced disordering

An Si/SiN/sub x//Si trilayer diffusion source and mask is described and applied to an alignment-free process for fabricating lasers by impurity-induced disordering (IID). Edge-emitting lasers with continuous wave threshold currents of 4.8 mA were achieved, and folded-cavity surface-emitting lasers w...

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Bibliographic Details
Published in:IEEE photonics technology letters 1993-11, Vol.5 (11), p.1261-1263
Main Authors: Floyd, P.D., Chao, C.P., Law, K.-K., Merz, J.L.
Format: Article
Language:English
Subjects:
426002 - Engineering- Lasers & Masers- (1990-)
DEMONSTRATION PROGRAMS
ENGINEERING
ETCHING
Exact sciences and technology
FABRICATION
Fundamental areas of phenomenology (including applications)
Gallium arsenide
HETEROJUNCTIONS
Impurities
JUNCTIONS
LASER MATERIALS
LASERS
MATERIALS
Metallization
Optical device fabrication
Optical materials
Optics
Physics
Quantum well lasers
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
Semiconductor lasers
laser diodes
SOLID STATE LASERS
Surface emitting lasers
SURFACE FINISHING
Threshold current
Waveguide lasers
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Summary:An Si/SiN/sub x//Si trilayer diffusion source and mask is described and applied to an alignment-free process for fabricating lasers by impurity-induced disordering (IID). Edge-emitting lasers with continuous wave threshold currents of 4.8 mA were achieved, and folded-cavity surface-emitting lasers with Si disordered waveguides were demonstrated for the first time with a threshold of 11 mA. The process that makes possible self-aligned-metallization on a diffusion defined stripe will be useful in fabricating narrow stripe IID lasers and simplify processing for integration of IID waveguide devices.< >
ISSN:1041-1135
1941-0174
DOI:10.1109/68.250038