Resonant cavity light emitting diode and detector using epitaxial liftoff

Epitaxial liftoff (ELO) is used in a novel manner to form arrays of vertical resonant cavity light emitting diodes (RCLED's) using two metal mirrors. The epitaxial layers consist of an InP/InGaAs p-i-n structure. Electroluminescence from the vertically emitting resonant cavity is measured CW at...

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Bibliographic Details
Published in:IEEE photonics technology letters 1993-09, Vol.5 (9), p.1041-1043
Main Authors: Corbett, B., Considine, L., Walsh, S., Kelly, W.M.
Format: Article
Language:English
Subjects:
Applied sciences
Electroluminescence
Electronics
Epitaxial layers
Exact sciences and technology
Indium gallium arsenide
Indium phosphide
Light emitting diodes
Mirrors
Optical arrays
Optoelectronic devices
PIN photodiodes
Resonance
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Temperature
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Summary:Epitaxial liftoff (ELO) is used in a novel manner to form arrays of vertical resonant cavity light emitting diodes (RCLED's) using two metal mirrors. The epitaxial layers consist of an InP/InGaAs p-i-n structure. Electroluminescence from the vertically emitting resonant cavity is measured CW at room temperature to have a spectral width of 9 meV in contrast to a photoluminescence spectral width of 51 meV for the unprocessed layers. The structure behaves as a resonant detector under reverse bias. Cavities formed in this manner will find wide application in surface emitting and detecting arrays and spatial light modulators, and as a means of studying the physics of spontaneous emission.< >
ISSN:1041-1135
1941-0174
DOI:10.1109/68.257185