Beam magnification and the efficiency of optical trapping with 790-nm AlGaAs laser diodes

The efficiency of dielectric particle confinement with 790 nm AlGaAs laser diode optical traps is investigated as a function of beam magnification and polarization state. When an anamorphic prism pair is used to correct for diode beam ellipticity, trapping efficiencies of nearly 0.37 are achieved wi...

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Bibliographic Details
Published in:IEEE photonics technology letters 1994-05, Vol.6 (5), p.597-600
Main Authors: Escandon, G.J., Liu, Y., Sonek, G.J., Berns, M.W.
Format: Article
Language:English
Subjects:
Apertures
Charge carrier processes
Dielectrics
Diode lasers
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Laser beams
Microscopy
Optical elements, devices, and systems
Optical polarization
Optics
Particle beams
Physics
Power lasers
Vision defects
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Summary:The efficiency of dielectric particle confinement with 790 nm AlGaAs laser diode optical traps is investigated as a function of beam magnification and polarization state. When an anamorphic prism pair is used to correct for diode beam ellipticity, trapping efficiencies of nearly 0.37 are achieved with a magnification factor of 3×, laser powers of 4-18 mW, and an overfilled microscope objective entrance aperture. Results are compared for diodes having small (8 μm) and large (57 μm) astigmatisms, but comparable far-field divergence angles.
ISSN:1041-1135
1941-0174
DOI:10.1109/68.285553