Epitaxial (Al,Ga)InP-oxide distributed Bragg reflectors for use in visible-wavelength optical devices

Epitaxially-grown distributed Bragg reflectors (DBR's) employing thermally oxidized AlAs as the low refractive index constituent and (Al,Ga)InP as the high index constituent are fabricated. The 4.5-pair Ga/sub 0.5/In/sub 0.5/ P-oxide and Al/sub 0.5/In/sub 0.5/ P-oxide DBR's exhibit high re...

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Bibliographic Details
Published in:IEEE photonics technology letters 1995-04, Vol.7 (4), p.385-387
Main Authors: MacDougal, M.H., Hummel, S.G., Dapkus, P.D., Hanmin Zhao, Yong Cheng
Format: Article
Language:English
Subjects:
Applied sciences
Bandwidth
Dielectric materials
Distributed Bragg reflectors
Electronics
Exact sciences and technology
Gallium arsenide
Mirrors
Optical devices
Optoelectronic devices
Oxidation
Reflectivity
Refractive index
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Vertical cavity surface emitting lasers
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Summary:Epitaxially-grown distributed Bragg reflectors (DBR's) employing thermally oxidized AlAs as the low refractive index constituent and (Al,Ga)InP as the high index constituent are fabricated. The 4.5-pair Ga/sub 0.5/In/sub 0.5/ P-oxide and Al/sub 0.5/In/sub 0.5/ P-oxide DBR's exhibit high reflectivity (>90%) over a range of 635-967 nm and 470-676 nm, respectively. The (Al,Ga)InP-oxide DBR's are shown to require less material to produce high reflectivity and to have significantly wider bandwidth than all-semiconductor DBR's used in the visible spectrum.< >
ISSN:1041-1135
1941-0174
DOI:10.1109/68.376810