Grafted GaAs detectors on lithium niobate and glass optical waveguides

The integration of a GaAs MSM (metal-semiconductor-metal) detector with LiNbO/sub 3/ and glass optical waveguides is discussed. A 250-nm thick GaAs detector layer was fabricated using a recently reported liftoff technique and subsequently grafted onto the waveguide chip. Proof of the optical interac...

Full description

Saved in:
Bibliographic Details
Published in:IEEE photonics technology letters 1989-11, Vol.1 (11), p.379-380
Main Authors: Yi-Yan, A., Chan, W.K., Gmitter, T.J., Florez, L.T., Jackel, J.L., Yablonovitch, E., Bhat, R., Harbison, J.P.
Format: Article
Language:English
Subjects:
Conducting materials
Detectors
Gallium arsenide
Glass
High speed optical techniques
Lithium niobate
Optical buffering
Optical materials
Optical waveguides
Semiconductor materials
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The integration of a GaAs MSM (metal-semiconductor-metal) detector with LiNbO/sub 3/ and glass optical waveguides is discussed. A 250-nm thick GaAs detector layer was fabricated using a recently reported liftoff technique and subsequently grafted onto the waveguide chip. Proof of the optical interaction between the waveguide and its grafted detector was provided by the total absorption of 633 nm of guided light within a distance of approximately 1 mm from the leading edge of the GaAs layer and by the presence of a photocurrent at the detector terminals. It is suggested that the grafting technique will prove useful in the design of new and cost-effective optoelectronic devices.< >
ISSN:1041-1135
1941-0174
DOI:10.1109/68.43385