Fabrication of high-speed resonant cavity enhanced Schottky photodiodes

We report the fabrication and testing of a GaAs-based high-speed resonant cavity enhanced (RCE) Schottky photodiode. The top-illuminated RCE detector is constructed by integrating a Schottky contact, a thin absorption region (In/sub 0.08/Ga/sub 0.92/As) and a distributed AlAs-GaAs Bragg mirror. The...

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Bibliographic Details
Published in:IEEE photonics technology letters 1997-05, Vol.9 (5), p.672-674
Main Authors: Ozbay, E., Islam, M.S., Onat, B., Gokkavas, M., Aytur, O., Tuttle, G., Towe, E., Henderson, R.H., Selim Unlu, M.
Format: Article
Language:English
Subjects:
Bandwidth
Detectors
Electromagnetic wave absorption
Fabrication
Microwave devices
Mirrors
Photodiodes
Resonance
Schottky barriers
Testing
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Summary:We report the fabrication and testing of a GaAs-based high-speed resonant cavity enhanced (RCE) Schottky photodiode. The top-illuminated RCE detector is constructed by integrating a Schottky contact, a thin absorption region (In/sub 0.08/Ga/sub 0.92/As) and a distributed AlAs-GaAs Bragg mirror. The Schottky contact metal serves as a high-reflectivity top mirror in the RCE detector structure. The devices were fabricated by using a microwave-compatible fabrication process. The resulting spectral photo response had a resonance around 895 nm, in good agreement with our simulations. The full-width-at-half-maximum (FWHM) was 15 nm, and the enhancement factor was in excess of 6. The photodiode had an experimental setup limited temporal response of 18 ps FWHM, corresponding to a 3-dB bandwidth of 20 GHz.
ISSN:1041-1135
1941-0174
DOI:10.1109/68.588199