Loading…
Ultrafast all-optical switching in an asymmetric Fabry-Perot device using low-temperature-grown GaAs
We report the first ultrafast all-optical switching using low-temperature-grown bulk semiconductor material (LT-GaAs) in a compact asymmetric Fabry-Perot device. We obtain 3-ps response times, 2.8-dB insertion loss, 40-nm bandwidth, and 15-dB contrast ratios using 200-fJ/μm 2 average switching energ...
Saved in:
Published in: | IEEE photonics technology letters 1998-12, Vol.10 (12), p.1733-1735 |
---|---|
Main Authors: | , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | We report the first ultrafast all-optical switching using low-temperature-grown bulk semiconductor material (LT-GaAs) in a compact asymmetric Fabry-Perot device. We obtain 3-ps response times, 2.8-dB insertion loss, 40-nm bandwidth, and 15-dB contrast ratios using 200-fJ/μm 2 average switching energy flux. |
---|---|
ISSN: | 1041-1135 1941-0174 |
DOI: | 10.1109/68.730485 |