Loading…

Ultrafast all-optical switching in an asymmetric Fabry-Perot device using low-temperature-grown GaAs

We report the first ultrafast all-optical switching using low-temperature-grown bulk semiconductor material (LT-GaAs) in a compact asymmetric Fabry-Perot device. We obtain 3-ps response times, 2.8-dB insertion loss, 40-nm bandwidth, and 15-dB contrast ratios using 200-fJ/μm 2 average switching energ...

Full description

Saved in:
Bibliographic Details
Published in:IEEE photonics technology letters 1998-12, Vol.10 (12), p.1733-1735
Main Authors: Loka, H.S., Smith, P.W.E.
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report the first ultrafast all-optical switching using low-temperature-grown bulk semiconductor material (LT-GaAs) in a compact asymmetric Fabry-Perot device. We obtain 3-ps response times, 2.8-dB insertion loss, 40-nm bandwidth, and 15-dB contrast ratios using 200-fJ/μm 2 average switching energy flux.
ISSN:1041-1135
1941-0174
DOI:10.1109/68.730485