High-temperature characteristics of 1.3-μm InAsP-InAlGaAs ridge waveguide lasers

High-temperature characteristics of InAsP-InAlGaAs strained multiquantum-well (MQW) lasers with a large conduction band discontinuity (/spl Delta/E/sub c/) are demonstrated. The InAsP-InAlGaAs MQW ridge waveguide lasers with narrow stripes exhibited a characteristic temperature as high as 143 K in t...

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Bibliographic Details
Published in:IEEE photonics technology letters 1999-02, Vol.11 (2), p.164-166
Main Authors: Yamada, M., Anan, T., Tokutome, K., Sugou, S.
Format: Article
Language:English
Subjects:
Conduction band
Discontinuity
Gas lasers
Indium phosphide
Lasers
Optical materials
Optical waveguides
Photonics
Quantum well devices
Quantum well lasers
Ridges
Semiconductor lasers
Temperature distribution
Waveguide discontinuities
Waveguide lasers
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Summary:High-temperature characteristics of InAsP-InAlGaAs strained multiquantum-well (MQW) lasers with a large conduction band discontinuity (/spl Delta/E/sub c/) are demonstrated. The InAsP-InAlGaAs MQW ridge waveguide lasers with narrow stripes exhibited a characteristic temperature as high as 143 K in the range from 25/spl deg/C to 85/spl deg/C. This material system is promising for developing a cooling-system-free 1.3-μm laser.
ISSN:1041-1135
1941-0174
DOI:10.1109/68.740691