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Double-locked laser diode for microwave photonics applications
Semiconductor lasers subjected to near-resonant external optical injection can exhibit strong oscillations of the output power due to a dynamic instability in the coupling of the gain medium to the circulating optical field. The oscillation frequency depends on the operating point of the injected la...
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Published in: | IEEE photonics technology letters 1999-11, Vol.11 (11), p.1476-1478 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Semiconductor lasers subjected to near-resonant external optical injection can exhibit strong oscillations of the output power due to a dynamic instability in the coupling of the gain medium to the circulating optical field. The oscillation frequency depends on the operating point of the injected laser and the strength and frequency offset of the injected optical signal. Adding a reference current modulation to the dc-bias current can induce the oscillation frequency of the optical power to become locked to the reference. Tunable, locked output from 9.5 to 17.1 GHz is demonstrated, with a linewidth below the 1-kHz resolution limit of the measurement apparatus. |
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ISSN: | 1041-1135 1941-0174 |
DOI: | 10.1109/68.803084 |