Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers

Room-temperature pulsed operation of InGaAsP (1.3 mu m)/InP vertical cavity surface emitting lasers has been achieved with threshold current as low as 50 mA using a constricted-mesa structure with dielectric mirrors. Above-room-temperature operation has also been realized with a maximum operation te...

Full description

Saved in:
Bibliographic Details
Published in:IEEE photonics technology letters 1991-11, Vol.3 (11), p.977-979
Main Authors: Wada, H., Babic, D.I., Crawford, D.L., Reynolds, T.E., Dudley, J.J., Bowers, J.E., Hu, E.L., Merz, J.L., Miller, B.I., Koren, U., Young, M.G.
Format: Article
Language:English
Subjects:
Chemical lasers
Electrodes
Etching
Gallium arsenide
Indium phosphide
Optical pulses
Surface emitting lasers
Temperature
Threshold current
Vertical cavity surface emitting lasers
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Room-temperature pulsed operation of InGaAsP (1.3 mu m)/InP vertical cavity surface emitting lasers has been achieved with threshold current as low as 50 mA using a constricted-mesa structure with dielectric mirrors. Above-room-temperature operation has also been realized with a maximum operation temperature of 66 degrees C. Pulsed and continuous-wave threshold currents at 77 K are 1.5 and 3.9 mA, respectively.< >
ISSN:1041-1135
1941-0174
DOI:10.1109/68.97832