Active antennas incorporating tunnel diodes-large signal model approach

In this letter, a comprehensive dc and RF model of heterostructure interband tunnel diodes (HITDs) is extracted. Active antennas incorporating tunnel diodes are analyzed in the time domain using this tunnel diode model. The simulated and measured results are in good agreement in terms of oscillation...

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Bibliographic Details
Published in:IEEE microwave and wireless components letters 2001-08, Vol.11 (8), p.331-333
Main Authors: Kai Liu, El-Ghazaly, S.M., Deshpande, M.R., Nair, V., El-Zein, N., Goronkin, H.
Format: Article
Language:English
Subjects:
Antenna arrays
Antenna measurements
Antennas
Applied sciences
Circuit properties
Circuit simulation
Computer simulation
Direct current
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Finite difference methods
Injection-locked oscillators
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Microwaves
Noise
Oscillations
Radio frequency
Radiocommunications
RF signals
Semiconductor diodes
Telecommunications
Telecommunications and information theory
Time domain analysis
Tunnel diodes
Tunneling
Voltage
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Summary:In this letter, a comprehensive dc and RF model of heterostructure interband tunnel diodes (HITDs) is extracted. Active antennas incorporating tunnel diodes are analyzed in the time domain using this tunnel diode model. The simulated and measured results are in good agreement in terms of oscillation frequencies of the active antennas. Phase noise of -114.67 dBc/Hz @1.0 MHz offset is achieved for injection-locked active antennas. The simulated injection locking range of a Ka band active antenna array is investigated.
ISSN:1531-1309
2771-957X
1558-1764
2771-9588
DOI:10.1109/7260.941780