Comparison of soft-breakdown triggers for large-area capacitors under constant voltage stress

This work quantitatively compares soft breakdown identification methods for constant voltage stress of large-area nMOS capacitors (up to 10 mm/sup 2/) with 1.8- to 12-nm gate-oxide thickness (with negative gate voltage). We conclude that in the studied range, breakdown is identified more reliably wi...

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Bibliographic Details
Published in:IEEE transactions on device and materials reliability 2001-09, Vol.1 (3), p.150-157
Main Authors: Schmitz, J., Tuinhout, H.P., Kretschmann, H.J., Woerlee, P.H.
Format: Magazinearticle
Language:English
Subjects:
Applied sciences
Background noise
Breakdown
Breakdown voltage
Capacitors
Carbon capture and storage
Dielectric breakdown
Dielectric, amorphous and glass solid devices
Electric breakdown
Electric potential
Electronics
Exact sciences and technology
Filtering
Fluctuation
MOS devices
Probability
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Stress
Stresses
Testing
Testing, measurement, noise and reliability
Voltage
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Summary:This work quantitatively compares soft breakdown identification methods for constant voltage stress of large-area nMOS capacitors (up to 10 mm/sup 2/) with 1.8- to 12-nm gate-oxide thickness (with negative gate voltage). We conclude that in the studied range, breakdown is identified more reliably with a current step trigger than through increased current fluctuation. We present a method to quantify the system background noise, and show results of data filtering algorithms that significantly enhance the ratio between the breakdown signal and background noise level.
ISSN:1530-4388
1558-2574
DOI:10.1109/7298.974830