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A 5-Gb/s decision circuit fabricated in a 1.5- mu m super-self-aligned silicon bipolar IC technology

The design and experimental measurements on a clocked decision circuit for optical communication applications are reviewed. The circuit, fabricated in a 1.5- mu m super-self-aligned silicon bipolar technology, yields a bit-error rate (BER)

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Bibliographic Details
Published in:IEEE microwave and guided wave letters 1991-05, Vol.1 (5), p.103-106
Main Authors: Swartz, R.G., Archer, V.D., Chiu, T.Y., Ota, Y., Voshchenkov, A.M., Long, T., Moerschel, K., Possanza, W.
Format: Article
Language:English
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Description
Summary:The design and experimental measurements on a clocked decision circuit for optical communication applications are reviewed. The circuit, fabricated in a 1.5- mu m super-self-aligned silicon bipolar technology, yields a bit-error rate (BER)
ISSN:1051-8207
1558-2329
DOI:10.1109/75.89077