Spectral features of substrate phonon events obtained by illuminating superconducting tunnel junctions with X-rays

The pulse height spectra of the substrate phonon events obtained with superconducting tunnel junctions (STJs) were examined. We compared the spectra for STJs with and without a 50-nm-thick buffer layer of aluminum-oxide on the sapphire substrate under X-ray illumination. We found-that the spectral d...

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Bibliographic Details
Published in:IEEE transactions on applied superconductivity 2001-03, Vol.11 (1), p.708-711
Main Authors: Otani, C., Ikeda, T., Kato, H., Kawai, K., Miyasaka, H., Oku, T., Ootani, W., Sato, H., Shimizu, H.M., Takizawa, Y., Watanabe, H., Nakagawa, H., Akoh, H., Aoyagi, M., Taino, T.
Format: Article
Language:English
Subjects:
Applied sciences
Attenuation
Buffer layers
Detectors
Electronics
Exact sciences and technology
Josephson junctions
Lighting
Phonons
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Skin
Superconducting devices
Superconducting epitaxial layers
X-rays
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Summary:The pulse height spectra of the substrate phonon events obtained with superconducting tunnel junctions (STJs) were examined. We compared the spectra for STJs with and without a 50-nm-thick buffer layer of aluminum-oxide on the sapphire substrate under X-ray illumination. We found-that the spectral difference was concentrated in the high-energy tail of the component, corresponding to the events absorbed within a thin skin. The effective thickness of this skin was estimated to be about 3 /spl mu/m by using the amount of difference in the spectra. We explain that the spectral difference could be caused by the selective attenuation of high-frequency phonons in the substrate and buffer layer.
ISSN:1051-8223
1558-2515
DOI:10.1109/77.919443