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A High-Precision Bandgap Reference With a V-Curve Correction Circuit
In this study, a precision bandgap reference with a v-curve correction (VCC) circuit is presented. The proposed VCC circuit generates a correction voltage to reduce the temperature drift of the reference voltage and achieves a low temperature coefficient (TC) in a wide temperature range. The propose...
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Published in: | IEEE access 2020, Vol.8, p.62632-62638 |
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creator | Lee, Chang-Chi Chen, Hou-Ming Lu, Chi-Chang Lee, Bo-Yi Huang, Hsien-Chi Fu, He-Sheng Lin, Yong-Xin |
description | In this study, a precision bandgap reference with a v-curve correction (VCC) circuit is presented. The proposed VCC circuit generates a correction voltage to reduce the temperature drift of the reference voltage and achieves a low temperature coefficient (TC) in a wide temperature range. The proposed bandgap reference was designed and fabricated using a standard TSMC 0.18-\mu \text{m} 1P6M CMOS technology with an active area of 0.0139 mm 2 . The measured results show that the proposed bandgap reference achieves a TC of 1.9-5.28 ppm/°C over a temperature range of -40°C to 140 °C at a supply voltage of 1.8 V. In addition, the circuit demonstrated a line regulation of 0.033 %/V for supply voltages of 1.2 - 1.8 V at room temperature. |
doi_str_mv | 10.1109/ACCESS.2020.2984800 |
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The proposed VCC circuit generates a correction voltage to reduce the temperature drift of the reference voltage and achieves a low temperature coefficient (TC) in a wide temperature range. The proposed bandgap reference was designed and fabricated using a standard TSMC 0.18-\mu \text{m} 1P6M CMOS technology with an active area of 0.0139 mm 2 . The measured results show that the proposed bandgap reference achieves a TC of 1.9-5.28 ppm/°C over a temperature range of -40°C to 140 °C at a supply voltage of 1.8 V. In addition, the circuit demonstrated a line regulation of 0.033 %/V for supply voltages of 1.2 - 1.8 V at room temperature.</description><identifier>ISSN: 2169-3536</identifier><identifier>EISSN: 2169-3536</identifier><identifier>DOI: 10.1109/ACCESS.2020.2984800</identifier><identifier>CODEN: IAECCG</identifier><language>eng</language><publisher>Piscataway: IEEE</publisher><subject>Bandgap reference ; Circuits ; CMOS ; Electric potential ; Energy gap ; line regulation ; Low temperature ; Photonic band gap ; Room temperature ; Simulation ; Temperature ; temperature coefficient (TC) ; Temperature distribution ; temperature drift ; Temperature measurement ; Transistors ; v-curve correction (VCC) circuit ; Voltage ; Voltage control ; Voltage measurement</subject><ispartof>IEEE access, 2020, Vol.8, p.62632-62638</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2020</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c408t-3edb9d93dad26d46bc877d8d06e29c78fe5314ad476fbe1c7769885e186c5d203</citedby><cites>FETCH-LOGICAL-c408t-3edb9d93dad26d46bc877d8d06e29c78fe5314ad476fbe1c7769885e186c5d203</cites><orcidid>0000-0002-1575-883X ; 0000-0001-8214-4208</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9052729$$EHTML$$P50$$Gieee$$Hfree_for_read</linktohtml><link.rule.ids>314,780,784,4024,27633,27923,27924,27925,54933</link.rule.ids></links><search><creatorcontrib>Lee, Chang-Chi</creatorcontrib><creatorcontrib>Chen, Hou-Ming</creatorcontrib><creatorcontrib>Lu, Chi-Chang</creatorcontrib><creatorcontrib>Lee, Bo-Yi</creatorcontrib><creatorcontrib>Huang, Hsien-Chi</creatorcontrib><creatorcontrib>Fu, He-Sheng</creatorcontrib><creatorcontrib>Lin, Yong-Xin</creatorcontrib><title>A High-Precision Bandgap Reference With a V-Curve Correction Circuit</title><title>IEEE access</title><addtitle>Access</addtitle><description>In this study, a precision bandgap reference with a v-curve correction (VCC) circuit is presented. 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In addition, the circuit demonstrated a line regulation of 0.033 %/V for supply voltages of 1.2 - 1.8 V at room temperature.</description><subject>Bandgap reference</subject><subject>Circuits</subject><subject>CMOS</subject><subject>Electric potential</subject><subject>Energy gap</subject><subject>line regulation</subject><subject>Low temperature</subject><subject>Photonic band gap</subject><subject>Room temperature</subject><subject>Simulation</subject><subject>Temperature</subject><subject>temperature coefficient (TC)</subject><subject>Temperature distribution</subject><subject>temperature drift</subject><subject>Temperature measurement</subject><subject>Transistors</subject><subject>v-curve correction (VCC) circuit</subject><subject>Voltage</subject><subject>Voltage control</subject><subject>Voltage measurement</subject><issn>2169-3536</issn><issn>2169-3536</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>ESBDL</sourceid><sourceid>DOA</sourceid><recordid>eNpNkFtLw0AQhYMoWLS_oC8Bn1P3lr081lhtoaBYL4_LZne23VKbukkE_72pKcV5mWE458zwJckIozHGSN1OimK6XI4JImhMlGQSobNkQDBXGc0pP_83XybDut6grmS3ysUguZ-ks7BaZ88RbKhDtUvvzM6tzD59AQ8RdhbSj9CsU5O-Z0UbvyEtqtiJm4O2CNG2oblOLrzZ1jA89qvk7WH6WsyyxdPjvJgsMsuQbDIKrlROUWcc4Y7x0kohnHSIA1FWSA85xcw4JrgvAVshuJIyByy5zR1B9CqZ97muMhu9j-HTxB9dmaD_FlVcaRObYLegmXfYKkI45p5ZJQ0XvvROYIMcWOm6rJs-ax-rrxbqRm-qNu669zVhORWIcsk6Fe1VNlZ1HcGfrmKkD_R1T18f6Osj_c416l0BAE4OhXIiiKK_Pal_JA</recordid><startdate>2020</startdate><enddate>2020</enddate><creator>Lee, Chang-Chi</creator><creator>Chen, Hou-Ming</creator><creator>Lu, Chi-Chang</creator><creator>Lee, Bo-Yi</creator><creator>Huang, Hsien-Chi</creator><creator>Fu, He-Sheng</creator><creator>Lin, Yong-Xin</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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The proposed VCC circuit generates a correction voltage to reduce the temperature drift of the reference voltage and achieves a low temperature coefficient (TC) in a wide temperature range. The proposed bandgap reference was designed and fabricated using a standard TSMC 0.18-\mu \text{m} 1P6M CMOS technology with an active area of 0.0139 mm 2 . The measured results show that the proposed bandgap reference achieves a TC of 1.9-5.28 ppm/°C over a temperature range of -40°C to 140 °C at a supply voltage of 1.8 V. In addition, the circuit demonstrated a line regulation of 0.033 %/V for supply voltages of 1.2 - 1.8 V at room temperature.</abstract><cop>Piscataway</cop><pub>IEEE</pub><doi>10.1109/ACCESS.2020.2984800</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0002-1575-883X</orcidid><orcidid>https://orcid.org/0000-0001-8214-4208</orcidid><oa>free_for_read</oa></addata></record> |
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subjects | Bandgap reference Circuits CMOS Electric potential Energy gap line regulation Low temperature Photonic band gap Room temperature Simulation Temperature temperature coefficient (TC) Temperature distribution temperature drift Temperature measurement Transistors v-curve correction (VCC) circuit Voltage Voltage control Voltage measurement |
title | A High-Precision Bandgap Reference With a V-Curve Correction Circuit |
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