A W-Band Amplifier With a New Wide-Band Interstage Matching Technique Using Self-Resonance of a Microstrip-Coupled Line

A new interstage matching technique is presented for design of a wide-band multi-stage amplifier using commercial 60 nm GaN-on-silicon technology in the W-band. The proposed interstage matching network is designed as a two-pole conjugated impedance matching approach for wideband characteristics usin...

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Bibliographic Details
Published in:IEEE access 2022, Vol.10, p.93894-93900
Main Authors: Lee, Sunwoo, Kim, Wansik, Kim, Sosu, Kim, Min-Su, Kim, Junghyun
Format: Article
Language:English
Subjects:
Amplification
Amplifier
Amplifier design
Amplifiers
GaN-on-silicon
HEMTs
Impedance
Impedance matching
interstage matching technique
low-characteristic impedance transmission line
Microstrip
microstrip-coupled line
MIM capacitors
MODFETs
Resonance
Transistors
Transmission lines
W-band
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Summary:A new interstage matching technique is presented for design of a wide-band multi-stage amplifier using commercial 60 nm GaN-on-silicon technology in the W-band. The proposed interstage matching network is designed as a two-pole conjugated impedance matching approach for wideband characteristics using low-characteristic impedance transmission lines and an optimized microstrip-coupled line. In particular, the microstrip-coupled line provides strong resonance at the desired frequency, enabling optimal conjugate impedance matching of both edge and intermediate frequencies simultaneously. The implemented W-band three-stage amplifier using the proposed interstage matching technique exhibited a small-signal gain above 14.1 dB from 75 to 103 GHz. Also, the output power between 92-100 GHz was greater than 25 dBm, and the maximum output power at 96 GHz was 25.8 dBm. The W-band amplifier was designed with an area of 2 mm \times1.2 mm.
ISSN:2169-3536
2169-3536
DOI:10.1109/ACCESS.2022.3203190