A Comprehensive Review of Single Event Transients on Various MOS Devices

Due to the constant scaling of device sizes and the arrival of nanoscale technologies, Single-Event Transients (SETs) are becoming an increasingly important problem in the design and reliability evaluation of semiconductor devices. This paper extensively reviews a physics-based analytical model cons...

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Bibliographic Details
Published in:IEEE access 2024, Vol.12, p.154760-154777
Main Authors: Rajakumar, P. S., Satheesh Kumar, S.
Format: Article
Language:English
Subjects:
Analytical models
DG-MOSFET
Dielectrics
Field effect transistors
Fin-FET
FinFETs
Integrated circuit modeling
LET
Linear energy transfer (LET)
Logic gates
Metal oxide semiconductors
MOS devices
MOSFETs
NS-FET
NW-FET
Performance evaluation
Reliability analysis
Semiconductor device modeling
Semiconductor devices
Semiconductor process modeling
Single event transients
Solid modeling
TCAD
Transient analysis
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Summary:Due to the constant scaling of device sizes and the arrival of nanoscale technologies, Single-Event Transients (SETs) are becoming an increasingly important problem in the design and reliability evaluation of semiconductor devices. This paper extensively reviews a physics-based analytical model constructed to describe and predict the occurrence and behavior of SETs in semiconductor devices. TCAD simulations are used to compare the SET characteristics of various MOSFETs, such as DG-MOSFETs, Fin-FETs, NW-FETs, and NS-FETs, under varied device parameters like dielectric materials, Linear Energy Transfer (LET) values, strike positions, voltage biases, device dimensions and channel doping. This study helps in understanding the relative SET immunity of various transistors for given applications, particularly those involving radiation-prone areas.
ISSN:2169-3536
2169-3536
DOI:10.1109/ACCESS.2024.3483223