150 GHz GaAs MITATT source

The performance of a GaAs Schottky barrier transmit-time source is described. The device is reversed biased into mixed tunnel-avalanche breakdown. A CW output power of 3 mW with 1/2% conversion efficiency has been measured at 150 GHz. This is the highest frequency CW GaAs source built to date and ha...

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Bibliographic Details
Published in:IEEE electron device letters 1980-06, Vol.1 (6), p.115-116
Main Authors: Elta, M.E., Fetterman, H.R., Macropoulos, W.V., Lambert, J.J.
Format: Article
Language:English
Subjects:
Application specific integrated circuits
Electric breakdown
Frequency
Gallium arsenide
Integrated circuit measurements
Integrated circuit noise
Local oscillators
Power generation
Power measurement
Schottky barriers
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Description
Summary:The performance of a GaAs Schottky barrier transmit-time source is described. The device is reversed biased into mixed tunnel-avalanche breakdown. A CW output power of 3 mW with 1/2% conversion efficiency has been measured at 150 GHz. This is the highest frequency CW GaAs source built to date and has many potential applications in systems requiring a low noise local oscillator in near millimeter microwave integrated circuits.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1980.25251