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Laser recrystallized polysilicon on SiO 2 for high performance resistors
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Published in: | IEEE electron device letters 1981-10, Vol.2 (10), p.254-256 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
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cited_by | cdi_FETCH-LOGICAL-c843-afbbb1a1aab96d853425a3b623cc4150890b89a02159fb958b6de8ed11f8b0f93 |
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container_end_page | 256 |
container_issue | 10 |
container_start_page | 254 |
container_title | IEEE electron device letters |
container_volume | 2 |
creator | Shah, R.R. Hollingsworth, D.R. Crosthwait, D.L. |
description | |
doi_str_mv | 10.1109/EDL.1981.25423 |
format | article |
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identifier | ISSN: 0741-3106 |
ispartof | IEEE electron device letters, 1981-10, Vol.2 (10), p.254-256 |
issn | 0741-3106 |
language | eng |
recordid | cdi_crossref_primary_10_1109_EDL_1981_25423 |
source | IEEE Electronic Library (IEL) Journals |
title | Laser recrystallized polysilicon on SiO 2 for high performance resistors |
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