In-situ low energy BF 2 + ion doping for silicon molecular beam epitaxy

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Bibliographic Details
Published in:IEEE electron device letters 1982-05, Vol.3 (5), p.138-140
Main Authors: Swartz, R.G., McFee, J.H., Voshchenkov, A.M., Finegan, S.N., Archer, V.D., O'Day, P.J.
Format: Article
Language:English
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ISSN:0741-3106
DOI:10.1109/EDL.1982.25513