Accumulation-punchthrough mode of operation of buried-channel MOSFET's

The current-voltage characteristics of a buried-channel MOSFET operated in a "punchthrough-accumulation" mode, when the neutral implanted channel is completely depleted due to punchthrough by substrate bias and an accumulation layer is induced by the gate, are demonstrated. It is shown tha...

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Bibliographic Details
Published in:IEEE electron device letters 1982-07, Vol.3 (7), p.203-204
Main Authors: Ratnam, P., Bhattacharyya, A.B.
Format: Article
Language:English
Subjects:
Channel bank filters
Current-voltage characteristics
Degradation
Equations
Large scale integration
MOSFET circuits
P-n junctions
Threshold voltage
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Description
Summary:The current-voltage characteristics of a buried-channel MOSFET operated in a "punchthrough-accumulation" mode, when the neutral implanted channel is completely depleted due to punchthrough by substrate bias and an accumulation layer is induced by the gate, are demonstrated. It is shown that the value of one of the device model parameters, φ MS , used under the above mode of operation corresponds to the gate and the substrate rather than to the gate and the channel.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1982.25538