Reduction of backgating effect in MBE-Grown GaAs/AlGaAs HEMT's

We have investigated the backgating effect in high electron mobility transistors (HEMT's) fabricated on MBE-grown GaAs/AlGaAs layers, which is undesirable for LSI fabrication. Comparing five different types of devices, we related the backgating effect to the interface between the GaAs substrate...

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Bibliographic Details
Published in:IEEE electron device letters 1987-06, Vol.8 (6), p.280-281
Main Authors: Yokoyama, T., Suzuki, M., Yamamoto, T., Saito, J., Ishikawa, T.
Format: Article
Language:English
Subjects:
Buffer layers
Electrodes
Etching
Gallium arsenide
HEMTs
Large scale integration
MESFETs
Molecular beam epitaxial growth
Substrates
Threshold voltage
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Summary:We have investigated the backgating effect in high electron mobility transistors (HEMT's) fabricated on MBE-grown GaAs/AlGaAs layers, which is undesirable for LSI fabrication. Comparing five different types of devices, we related the backgating effect to the interface between the GaAs substrate and the undoped GaAs buffer layer. By using a thermally etched GaAs substrate, we successfully reduced the backgating to the same order as that of ion-implanted GaAs MESFET's.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1987.26630