Transparent and Flexible Thin Film Electroluminescent Devices Using HiTUS Deposition and Laser Processing Fabrication

• Published in: IEEE journal of the Electron Devices Society 2016-01, Vol.4 (1), p.22-29
• Main Authors: Tsakonas, Costas, Wakeham, Steve, Cranton, Wayne M., Thwaites, Mike, Boutaud, Gabriel, Farrow, Carly, Koutsogeorgis, Demosthenes C., Ranson, Robert
• Format: Article
• Language: English
• Subjects: Annealing; Dielectric materials; electroluminescent device; Electroluminescent devices; laser processing; Phosphors; Substrates; Thin films
• ISSN: 2168-6734; 2168-6734
• DOI: 10.1109/JEDS.2015.2497086

Highly transparent thin film electroluminescent structures offering excellent switch on characteristics, high luminance and large break-down voltages have been deposited onto glass and flexible polymeric materials with no substrate heating using high target utilization sputtering. Deposition of ZnS:Mn as the active light emitting layer and Y 2 O 3 , Al 2 O 3 , Ta 2 O 5 , and HfO 2 as dielectric materials arranged in single and multiple layer configurations were investigated. Devices incorporating Al 2 O 3 , HfO 2 quadruple layers demonstrate the highest attainable luminance at low threshold voltage. Single pulse excimer laser irradiation of the phosphor layer prior to deposition of the top dielectric layer enhanced the luminance of the devices. The devices fabricated on glass and polymeric substrates exhibited a maximum luminance of 500 and 450 cdm -2 when driven at 270 VRMS and 220 VRMS, respectively, with a 1.0 kHz sine wave.