Si 3 N 4 /Al 2 O 3 Stack Layer Passivation for InAlAs/InGaAs InP-Based HEMTs With Good DC and RF Performances

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Bibliographic Details
Published in:IEEE journal of the Electron Devices Society 2018, Vol.6, p.49-54
Main Authors: Ding, Peng, Jin, Zhi, Chen, Chen, Asif, Muhammad, Wang, Xi, Niu, Jiebin, Yang, Feng, Ding, Wuchang, Su, Yongbo, Wang, Dahai
Format: Article
Language:English
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ISSN:2168-6734
2168-6734
DOI:10.1109/JEDS.2017.2765349