Improvement of Charge Injection Using Ferroelectric Si:HfO 2 As Blocking Layer in MONOS Charge Trapping Memory

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Bibliographic Details
Published in:IEEE journal of the Electron Devices Society 2018, Vol.6, p.121-125
Main Authors: Ji, Hao, Wei, Yehui, Zhang, Xinlei, Jiang, Ran
Format: Article
Language:English
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ISSN:2168-6734
2168-6734
DOI:10.1109/JEDS.2017.2785304