High-${k}$ HfO 2 -Based AlGaN/GaN MIS-HEMTs With Y 2 O 3 Interfacial Layer for High Gate Controllability and Interface Quality

Saved in:
Bibliographic Details
Published in:IEEE journal of the Electron Devices Society 2020, Vol.8, p.15-19
Main Authors: Shi, Ya-Ting, Xu, Wei-Zong, Zeng, Chang-Kun, Ren, Fang-Fang, Ye, Jian-Dong, Zhou, Dong, Chen, Dun-Jun, Zhang, Rong, Zheng, Youdou, Lu, Hai
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:
ISSN:2168-6734
2168-6734
DOI:10.1109/JEDS.2019.2956844