Correction to "Stable Operation of AlGaN/GaN HEMTs for 25 Hours at 400°C in Air"

In the referenced paper [1] , the micro-photograph shown in Fig. 1 (b) is of a representative HEMT. The measured HEMT of the paper has the following dimensions: ( {\mathrm {LG}} =5\mu {\mathrm{ m}}, {\mathrm {W}} = 20\mu {\mathrm{ m}}, {\mathrm {LGS}} = {\mathrm {LGD}} = 6\mu {\mathrm{ m}} ). Fig. 1...

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Bibliographic Details
Published in:IEEE journal of the Electron Devices Society 2020, Vol.8, p.716-716
Main Authors: Kargarrazi, Saleh, Yalamarthy, Ananth Saran, Satterthwaite, Peter F., Blankenberg, Scott William, Chapin, Caitlin, Senesky, Debbie G.
Format: Article
Language:English
Subjects:
Aluminum gallium nitride
Aluminum gallium nitrides
Analog integrated circuits
HEMTs
High electron mobility transistors
MODFETs
Semiconductor devices
Wide band gap semiconductors
Citations: Items that this one cites
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Summary:In the referenced paper [1] , the micro-photograph shown in Fig. 1 (b) is of a representative HEMT. The measured HEMT of the paper has the following dimensions: ( {\mathrm {LG}} =5\mu {\mathrm{ m}}, {\mathrm {W}} = 20\mu {\mathrm{ m}}, {\mathrm {LGS}} = {\mathrm {LGD}} = 6\mu {\mathrm{ m}} ). Fig. 1 has to be replaced with the corrected figure shown below:
ISSN:2168-6734
2168-6734
DOI:10.1109/JEDS.2020.3002710