Slit Field Plate Power MOSFET for Improvement of Figure-Of-Merits

A new low-voltage power MOSFET is proposed to improve the figure-of-merits (FOMs) for power loss reduction. Slit field plate (Slit FP) structure is effective to cope with both the on-resistance R_{on} A reduction and high speed switching due to flat electric field distribution and low gate density...

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Bibliographic Details
Published in:IEEE journal of the Electron Devices Society 2021, Vol.9, p.552-556
Main Authors: Ogawa, Taichi, Saito, Wataru, Nishizawa, Shin-Ichi
Format: Article
Language:English
Subjects:
Doping
Electric fields
Electrodes
Electron mobility
Field plate
figure-of-merit
Logic gates
Loss reduction
MOSFET
MOSFETs
on-resistance
power MOSFET
Ronsw
Stress
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Summary:A new low-voltage power MOSFET is proposed to improve the figure-of-merits (FOMs) for power loss reduction. Slit field plate (Slit FP) structure is effective to cope with both the on-resistance R_{on} A reduction and high speed switching due to flat electric field distribution and low gate density by the slit oxide. Therefore, Slit FP power MOSFET achieves better R_{on}A-R_{on} Q_{sw} and R_{on}A-R_{on} Q_{g} tradeoff characteristics compared with conventional FP power MOSFET. TCAD simulation result shows 12% of R_{on} A , 11% of R_{on} Q_{sw} , and 20% of R_{on} Q_{g} can be reduced simultaneously by the Slit FP power MOSFET compared with the conventional FP power MOSFET at the lowest R_{on} A design.
ISSN:2168-6734
2168-6734
DOI:10.1109/JEDS.2021.3079396