Investigation on Stability of p-GaN HEMTs With an Indium-Tin-Oxide Gate Under Forward Gate Bias

In this study, p-GaN HEMTs with an indium-tin-oxide (ITO) electrode fabricated on the two different Mg concentration, i.e., 1 \mathbf {\mathrm {\times }} 10 ^{19} cm −3 and 8 \mathbf {\mathrm {\times }} 10 ^{19\,\,} cm −3 ,in p-GaN layer are investigated for the first time under the forward gate...

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Bibliographic Details
Published in:IEEE journal of the Electron Devices Society 2021, Vol.9, p.687-690
Main Authors: Chang, Chih-Yao, Shen, Yao-Luen, Wang, Ching-Yao, Tang, Shun-Wei, Wu, Tian-Li, Kuo, Wei-Hung, Lin, Suh-Fang, Huang, Chih-Fang
Format: Article
Language:English
Subjects:
Bias
Breakdown
Electric breakdown
Electric potential
Electrodes
Electron devices
Gallium nitrides
GaN
HEMTs
high electron mobility transistor (HEMT)
High electron mobility transistors
Indium tin oxide
Indium tin oxides
indium–tin–oxide gate electrode
Logic gates
MODFETs
PBTI
Stability
Voltage
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Summary:In this study, p-GaN HEMTs with an indium-tin-oxide (ITO) electrode fabricated on the two different Mg concentration, i.e., 1 \mathbf {\mathrm {\times }} 10 ^{19} cm −3 and 8 \mathbf {\mathrm {\times }} 10 ^{19\,\,} cm −3 ,in p-GaN layer are investigated for the first time under the forward gate bias to understand the stability of the forward gate bias breakdown and {\mathrm {V}}_{TH} shift stability. First of all, a Mg concentration in p-GaN layer results in a better Ohmic characteristic between the ITO and p-GaN contact. Furthermore, the fabricated device with a high Mg concentration of p-GaN layer shows a better forward gate breakdown voltage, which can be attributed to the better Ohmic characteristic between p-GaN and ITO electrode. Last, an obvious negative {\mathrm {V}}_{TH} shift is observed, which is most probably related to the hole injections/trapping effects. In sum, the gate breakdown characteristic in p-GaN HEMTs with ITO electrode can be further improved while using high Mg concentration of p-GaN layer while an obvious a negative {\mathrm {V}}_{TH} shift under a forward gate bias is observed, indicating a trade-off between the gate breakdown voltage and {\mathrm {V}}_{TH} instability needs to be carefully considered to optimize the forward gate bias stability in p-GaN HEMTs with an ITO electrode.
ISSN:2168-6734
2168-6734
DOI:10.1109/JEDS.2021.3096389