SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology

Silicon carbide (SiC) power integrated circuit (IC) technology allows monolithic integration of 600V lateral SiC power MOSFETs and low-voltage SiC CMOS devices. It enables application-specific SiC ICs with high power output and work under harsh (high-temperature and radioactive) environments compare...

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Bibliographic Details
Published in:IEEE journal of the Electron Devices Society 2022, Vol.10, p.129-138
Main Authors: Liu, Tianshi, Zhang, Hua, Isukapati, Sundar Babu, Ashik, Emran, Morgan, Adam J., Lee, Bongmook, Sung, Woongje, Fayed, Ayman, White, Marvin H., Agarwal, Anant K.
Format: Article
Language:English
Subjects:
Circuit design
CMOS
CMOS circuits
High temperature
Integrated circuit modeling
Integrated circuits
Modelling
MOSFET
MOSFETs
Power integrated circuits
Semiconductor device modeling
SiC MOSFETs
Silicon
Silicon carbide
smart power IC
SPICE
SPICE modeling
trapped interface charges
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Summary:Silicon carbide (SiC) power integrated circuit (IC) technology allows monolithic integration of 600V lateral SiC power MOSFETs and low-voltage SiC CMOS devices. It enables application-specific SiC ICs with high power output and work under harsh (high-temperature and radioactive) environments compared to Si power ICs. This work presents the device characteristics, SPICE modeling, and SiC CMOS circuit demonstrations of the first two lots of the proposed SiC power IC technology. Level 3 SPICE models are created for the high-voltage lateral power MOSFETs and low-voltage CMOS devices. SiC ICs, such as the SiC CMOS inverter and ring oscillator, have been designed, packaged, and characterized. Proper operations of the circuits are demonstrated. The effects of the trapped interface charges on the characteristics of SiC MOSFETs and SiC ICs are also discussed.
ISSN:2168-6734
2168-6734
DOI:10.1109/JEDS.2022.3150364