Improvement of MoS2 Film Quality by Low Flux of Sputtered Particles Using a Molybdenum Grid

Lowering the flux of sputtered particles using a molybdenum grid reduced the deposition rate of MoS2 films with an enlargement of the grain size measured by in-plane X-ray diffraction. The MoS2 film crystallinity evaluated by the Raman spectroscopy was improved because the S/Mo ratio was also enhanc...

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Published in:IEEE journal of the Electron Devices Society 2024-11, p.1-1
Main Authors: Imai, Shinya, Ono, Ryo, Muneta, Iriya, Kakushima, Kuniyuki, Tatsumi, Tetsuya, Tomiya, Shigetaka, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Format: Article
Language:English
Subjects:
grain size
low-rate sputtering
molybdenum di-sulfide (MoS2)
transition metal di-chalcogenide (TMDC)
ultra-high vacuum (UHV) radio frequency (RF) magnetron sputtering
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container_title IEEE journal of the Electron Devices Society
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creator Imai, Shinya
Ono, Ryo
Muneta, Iriya
Kakushima, Kuniyuki
Tatsumi, Tetsuya
Tomiya, Shigetaka
Tsutsui, Kazuo
Wakabayashi, Hitoshi
description Lowering the flux of sputtered particles using a molybdenum grid reduced the deposition rate of MoS2 films with an enlargement of the grain size measured by in-plane X-ray diffraction. The MoS2 film crystallinity evaluated by the Raman spectroscopy was improved because the S/Mo ratio was also enhanced by the low-rate sputtering. In addition, the enhancement of the grain size was confirmed from plan-view TEM observations of MoS2 films, consistent with the in-plane XRD results. Therefore, reducing the particle flux during sputtering is expected to contribute to the better-quality MoS2 films for pn-stacked 2D-CMOS devices and human interface devices.
doi_str_mv 10.1109/JEDS.2024.3502922
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subjects grain size
low-rate sputtering
molybdenum di-sulfide (MoS2)
transition metal di-chalcogenide (TMDC)
ultra-high vacuum (UHV) radio frequency (RF) magnetron sputtering
title Improvement of MoS2 Film Quality by Low Flux of Sputtered Particles Using a Molybdenum Grid
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