A Comprehensive Study of Short-Circuit Ruggedness of Silicon Carbide Power MOSFETs

The behavior of silicon carbide (SiC) power MOSFETs under stressful short-circuit (SC) conditions is investigated in this paper. Two different SC failure phenomena for SiC power MOSFETs are thoroughly reported. Experimental evidence and TCAD electrothermal simulations are exploited to describe and d...

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Bibliographic Details
Published in:IEEE journal of emerging and selected topics in power electronics 2016-09, Vol.4 (3), p.978-987
Main Authors: Romano, Gianpaolo, Fayyaz, Asad, Riccio, Michele, Maresca, Luca, Breglio, Giovanni, Castellazzi, Alberto, Irace, Andrea
Format: Article
Language:English
Subjects:
Analytical models
Calibration
Computer simulation
Devices
Electronics
Failure
MOSFET
MOSFETs
Numerical models
Performance evaluation
Power electronics
Ruggedness
SC ruggedness
Short-circuit (SC) failure mechanism
Silicon carbide
silicon carbide (SiC) power MOSFETs
Temperature measurement
thermal runaway
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Description
Summary:The behavior of silicon carbide (SiC) power MOSFETs under stressful short-circuit (SC) conditions is investigated in this paper. Two different SC failure phenomena for SiC power MOSFETs are thoroughly reported. Experimental evidence and TCAD electrothermal simulations are exploited to describe and discriminate the failure sources. Physical causes are finally investigated and explained by means of properly calibrated numerical investigations and are reported along with their effects on devices' SC capability.
ISSN:2168-6777
2168-6785
DOI:10.1109/JESTPE.2016.2563220