Electrooptic modulation of silicon-on-insulator submicrometer-size waveguide devices

In this paper, we propose and analyze an electrically modulated silicon-on-insulator (SOI) submicrometer-size high-index-contrast waveguide. The geometry of the waveguide provides high lateral optical confinement and defines a lateral p-i-n diode. The electrooptic structure is electrically and optic...

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Bibliographic Details
Published in:Journal of lightwave technology 2003-10, Vol.21 (10), p.2332-2339
Main Authors: Barrios, C.A., Almeida, V.R., Panepucci, R., Lipson, M.
Format: Article
Language:English
Subjects:
Applied sciences
Circuit properties
Devices
Diodes
Electric, optical and optoelectronic circuits
Electronics
Electrooptic devices
Electrooptic modulators
Electrooptical waveguides
Electrooptics
Exact sciences and technology
Geometrical optics
Integrated optics. Optical fibers and wave guides
Intensity modulation
Mathematical models
Microcavities
Modulation
Modulators
Optical and optoelectronic circuits
Optical modulation
Optical waveguides
P-i-n diodes
Silicon on insulator technology
Waveguides
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Summary:In this paper, we propose and analyze an electrically modulated silicon-on-insulator (SOI) submicrometer-size high-index-contrast waveguide. The geometry of the waveguide provides high lateral optical confinement and defines a lateral p-i-n diode. The electrooptic structure is electrically and optically modeled. The effect of the waveguide geometry on the device performance is studied. Our calculations indicate that this scheme can be used to implement submicrometer high-index-contrast waveguide active devices on SOI. As an example of application, a one-dimensional microcavity intensity modulator is predicted to exhibit a modulation depth as high as 80% by employing a dc power consumption as low as 14 /spl mu/W.
ISSN:0733-8724
1558-2213
DOI:10.1109/JLT.2003.818167