Analysis of thermal limitations in high-speed microcavity saturable absorber all-optical switching gates

The limitations owing to device heating and thermo-optic effects in high-speed quantum-well microcavity saturable absorber devices are investigated both theoretically and experimentally. A simplified theoretical description of the device electronic, thermal, and optical properties is developed and a...

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Bibliographic Details
Published in:Journal of lightwave technology 2006-09, Vol.24 (9), p.3400-3408
Main Authors: Massoubre, D., Oudar, J.-L., O'Hare, A., Gay, M., Bramerie, L., Simon, J.-C., Shen, A., Decobert, J.
Format: Article
Language:English
Subjects:
All optical circuits
All-optical switching gate
Applied sciences
asymmetric Fabry-Perot devices
Circuit properties
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Heating
High speed optical techniques
Microcavities
Nonlinear optical devices
Nonlinear optics
Optical and optoelectronic circuits
Optical devices
optical regeneration
optical saturable absorption
Pulse measurements
Quantum well devices
Repeaters
semiconductor quantum well
Switching and signalling
Systems, networks and services of telecommunications
Telecommunications
Telecommunications and information theory
thermal effects
Thermooptic effects
Transmission and modulation (techniques and equipments)
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Summary:The limitations owing to device heating and thermo-optic effects in high-speed quantum-well microcavity saturable absorber devices are investigated both theoretically and experimentally. A simplified theoretical description of the device electronic, thermal, and optical properties is developed and applied to the modeling of the device switching characteristics for reamplification + reshaping step (2R) all-optical regeneration. These predictions are compared to nonlinear optical measurements performed with switching pulses of fixed duration and variable repetition rate on two devices with significantly different thermal properties. It is shown that proper optimization of the device thermal properties is crucial to avoid the degradation of device performance at high bit rate. It is also shown that the negative effects of optically induced heating on the switching contrast may be compensated to some extent by operating the device on the long wavelength side of the microcavity resonance
ISSN:0733-8724
1558-2213
DOI:10.1109/JLT.2006.879502