High-Power InGaAs/InP Partially Depleted Absorber Photodiodes for Microwave Generation

A 2-D fully coupled electrothermal physical model of a p-i-n photodiode, which takes into account external electric circuit, has been developed. Based on numerical simulation, we present the data on the maximal output microwave power with appropriate optical-to-microwave conversion loss for InGaAsP/...

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Bibliographic Details
Published in:Journal of lightwave technology 2008, Vol.26 (15), p.2732-2739
Main Authors: Malyshev, S.A., Chizh, A.L., Vasileuski, Y.G.
Format: Article
Language:English
Subjects:
Applied sciences
Circuit properties
Conversion
Coupling circuits
Depletion
Electric, optical and optoelectronic circuits
Electronics
Electrothermal effects
Exact sciences and technology
Frequency conversion
Frequency ranges
Indium gallium arsenide
Indium gallium arsenides
Indium phosphide
Indium phosphides
Mathematical models
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Microwave generation
Microwaves
millimeter-wave generation
Numerical simulation
Optical frequency conversion
Optical losses
Optoelectronic devices
p-i-n photodiodes
Photodiodes
PIN photodiodes
semiconductor device simulation
semiconductor device thermal factors
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Description
Summary:A 2-D fully coupled electrothermal physical model of a p-i-n photodiode, which takes into account external electric circuit, has been developed. Based on numerical simulation, we present the data on the maximal output microwave power with appropriate optical-to-microwave conversion loss for InGaAsP/InP partially depleted absorber photodiodes in the frequency range from 10 to 60 GHz.
ISSN:0733-8724
1558-2213
DOI:10.1109/JLT.2008.927594