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Improved Output Power of GaN-based Blue LEDs by Forming Air Voids on Ar-Implanted Sapphire Substrate
This paper investigates GaN-based blue light-emitting diodes (LEDs) grown on sapphire substrates with selective-area Ar-ion implantation. The GaN-based epitaxial layers grown on the Ar-implanted sapphire substrates (Ar-ISS) exhibited selective growth and subsequent lateral growth because of differen...
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Published in: | Journal of lightwave technology 2013-04, Vol.31 (8), p.1318-1322 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | This paper investigates GaN-based blue light-emitting diodes (LEDs) grown on sapphire substrates with selective-area Ar-ion implantation. The GaN-based epitaxial layers grown on the Ar-implanted sapphire substrates (Ar-ISS) exhibited selective growth and subsequent lateral growth because of different lattice constants between the implantation and implantation-free regions. As a result, air voids were formed at the GaN/sapphire interface, above the implanted regions and below the active layers of LEDs. We proposed the GaN layer growth mechanisms on the Ar-ISS, and characterized the LEDs with embedded air voids at the GaN/sapphire interface. Using a 20-mA current injection, the light output of the experimental LEDs was found to be 15% greater than that of conventional LEDs. This enhancement can be attributed to the light scattering at the textured GaN/air void interfaces, which increases the probability of photons escaping from the LEDs. |
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ISSN: | 0733-8724 1558-2213 |
DOI: | 10.1109/JLT.2013.2247740 |