Loading…

Improved Output Power of GaN-based Blue LEDs by Forming Air Voids on Ar-Implanted Sapphire Substrate

This paper investigates GaN-based blue light-emitting diodes (LEDs) grown on sapphire substrates with selective-area Ar-ion implantation. The GaN-based epitaxial layers grown on the Ar-implanted sapphire substrates (Ar-ISS) exhibited selective growth and subsequent lateral growth because of differen...

Full description

Saved in:
Bibliographic Details
Published in:Journal of lightwave technology 2013-04, Vol.31 (8), p.1318-1322
Main Authors: Jinn-Kong Sheu, Yu-Hsiang Yeh, Shang-Ju Tu, Ming-Lun Lee, Chen, P. C., Wei-Chih Lai
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper investigates GaN-based blue light-emitting diodes (LEDs) grown on sapphire substrates with selective-area Ar-ion implantation. The GaN-based epitaxial layers grown on the Ar-implanted sapphire substrates (Ar-ISS) exhibited selective growth and subsequent lateral growth because of different lattice constants between the implantation and implantation-free regions. As a result, air voids were formed at the GaN/sapphire interface, above the implanted regions and below the active layers of LEDs. We proposed the GaN layer growth mechanisms on the Ar-ISS, and characterized the LEDs with embedded air voids at the GaN/sapphire interface. Using a 20-mA current injection, the light output of the experimental LEDs was found to be 15% greater than that of conventional LEDs. This enhancement can be attributed to the light scattering at the textured GaN/air void interfaces, which increases the probability of photons escaping from the LEDs.
ISSN:0733-8724
1558-2213
DOI:10.1109/JLT.2013.2247740