Flip-Chip Integration of InP to SiN Photonic Integrated Circuits

We present our hybrid InP to SiN TriPleX integration interface with a novel alignment technique and its application to complex photonic integrated circuits. The integration interface comprises vertical alignment stops, which simplify the alignment process and allow for array integration with the sam...

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Bibliographic Details
Published in:Journal of lightwave technology 2020-05, Vol.38 (9), p.2630-2636
Main Authors: Theurer, Michael, Moehrle, Martin, Sigmund, Ariane, Velthaus, Karl-Otto, Oldenbeuving, Ruud M., Wevers, Lennart, Postma, Ferry M., Mateman, Richard, Schreuder, Frederik, Geskus, Dimitri, Worhoff, Kerstin, Dekker, Ronald, Heideman, Rene G., Schell, Martin
Format: Article
Language:English
Subjects:
Alignment
Arrays
Assembly
Backscattering
C band
Couplings
Distributed feedback lasers
Flip-chip devices
hybrid integrated circuits
III-V semiconductor materials
Indium phosphide
Integrated circuits
Optical device fabrication
Optical waveguides
Photonics
Reflectometry
semiconductor lasers
Silicon compounds
silicon photonics
Tunable lasers
Waveguide lasers
Waveguides
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Summary:We present our hybrid InP to SiN TriPleX integration interface with a novel alignment technique and its application to complex photonic integrated circuits. The integration interface comprises vertical alignment stops, which simplify the alignment process and allow for array integration with the same simplicity as for single dies. Horizontal alignment is carried out by utilizing optical backscatter reflectometry to get an active feedback signal without the need to operate the chip. Thus, typical contacting limitations of active flip-chip alignment are overcome. By using this method, we demonstrate the integration of InP DFB lasers with more than 60 mW of optical power coupled to a SiN waveguide with an averaged coupling loss of -2.1 dB. The hybrid integration process is demonstrated for single dies as well as full arrays. We evaluate the feasibility of the assembly process for complex photonic integrated circuits by integrating an InP gain chip to a SiN TriPleX external cavity. The process proves to be well suited and allows monitoring chip quality during assembly. A fully functional hybrid integrated tunable laser is fabricated, which is capable of full C-band tuning with optical output power of up to 60 mW.
ISSN:0733-8724
1558-2213
DOI:10.1109/JLT.2020.2972065