High Bandwidth Capacitance Efficient Silicon MOS Modulator

This article analysed and optimised horizontal Silicon insulator Silicon capacitor (H-SISCAP) phase shifter structures with insulator thickness t ox up to 40 nm. The phase shifter has an effective capacitance ( C eff ) around 0.5 fF/μm and a phase change efficiency 1.8 V ·cm, of which the balance be...

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Bibliographic Details
Published in:Journal of lightwave technology 2021-01, Vol.39 (1), p.201-207
Main Authors: Zhang, Weiwei, Debnath, Kapil, Chen, Bigeng, Li, Ke, Liu, Shenghao, Ebert, Martin, Dean Reynolds, Jamie, Khokhar, Ali Z., Littlejohns, Callum, Byers, James, Husain, Muhammad K., Gardes, Frederic Y., Saito, Shinichi, Thomson, David J.
Format: Article
Language:English
Subjects:
Bandwidth
Bandwidths
Capacitance
Depletion
Electrooptic modulators
Equalization
Mach-Zehnder interferometers
Modulators
MOS
Optical waveguides
Phase modulation
Phase shifters
Silicon
Silicon photonics
Thickness
Transmitters
Traveling waves
Waveguides
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Summary:This article analysed and optimised horizontal Silicon insulator Silicon capacitor (H-SISCAP) phase shifter structures with insulator thickness t ox up to 40 nm. The phase shifter has an effective capacitance ( C eff ) around 0.5 fF/μm and a phase change efficiency 1.8 V ·cm, of which the balance between capacitance and phase efficiency is comparable with silicon rib waveguide based depletion type phase shifters. Silicon Mach-Zehnder interferometer (MZI) modulators with 200 μm long H-SISCAP phase shifters optimised for TM polarised light have been fabricated and demonstrated with a 3 dB EO bandwidth above 35 GHz and intrinsic H-SISCAP RC bandwidth around 150 GHz. The modulator displays open eye-diagrams for data rates up to 60 Gbit/s without detection equalization and 72 Gbit/s with 2 taps equalization in NRZ-OOK operation. The demonstrated H-SISCAP phase shifter paves the way to build high bandwidth segmented, travelling wave and compact ring resonators modulators for applications of optical transmitters, microwave generations, and LIDAR applications, etc.
ISSN:0733-8724
1558-2213
DOI:10.1109/JLT.2020.3026945