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Interdigitated Back-Contacted Silicon Heterojunction Solar Cells With Improved Fill Factor and Efficiency

We compare recently reported results of efficient back-contacted amorphous/crystalline silicon heterojunction solar cells with fill factors up to 78.8% with calculated j-V characteristics that are derived from an area-weighted summation of recombination currents taken from lifetime measurements. We...

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Bibliographic Details
Published in:IEEE journal of photovoltaics 2011-10, Vol.1 (2), p.130-134
Main Authors: Haschke, J., Mingirulli, N., Gogolin, R., Ferré, Rafel, Schulze, T. F., Düsterhöft, Jan, Harder, Nils-Peter, Korte, L.
Format: Article
Language:English
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Summary:We compare recently reported results of efficient back-contacted amorphous/crystalline silicon heterojunction solar cells with fill factors up to 78.8% with calculated j-V characteristics that are derived from an area-weighted summation of recombination currents taken from lifetime measurements. We compare solar cell structures with and without an intrinsic buffer layer beneath the p-type amorphous silicon emitter. We find that the inclusion of the buffer layer reduces the fill-factor potential by changing the ideality of the recombination current. However, analyzing the series resistance by illumination-dependent j-V-measurements, we find that the major loss mechanism of the fill factor is the limitation of the charge-carrier transport.
ISSN:2156-3381
2156-3403
DOI:10.1109/JPHOTOV.2011.2169943