Effective Passivation of Black Silicon Surfaces by Atomic Layer Deposition

The poor charge-carrier transport properties attributed to nanostructured surfaces have been so far more detrimental for final device operation than the gain obtained from the reduced reflectance. Here, we demonstrate results that simultaneously show a huge improvement in the light absorption and in...

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Bibliographic Details
Published in:IEEE journal of photovoltaics 2013-01, Vol.3 (1), p.90-94
Main Authors: Repo, P., Haarahiltunen, A., Sainiemi, L., Yli-Koski, M., Talvitie, H., Schubert, M. C., Savin, H.
Format: Article
Language:English
Subjects:
Aluminum oxide
atomic layer deposition (ALD)
black silicon (b-Si)
Etching
Nanostructures
Passivation
Photovoltaic cells
Silicon
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Summary:The poor charge-carrier transport properties attributed to nanostructured surfaces have been so far more detrimental for final device operation than the gain obtained from the reduced reflectance. Here, we demonstrate results that simultaneously show a huge improvement in the light absorption and in the surface passivation by applying atomic layer coating on highly absorbing silicon nanostructures. The results advance the development of photovoltaic applications, including high-efficiency solar cells or any devices, that require high-sensitivity light response.
ISSN:2156-3381
2156-3403
DOI:10.1109/JPHOTOV.2012.2210031