Ion-Implanted Screen-Printed n-Type Solar Cell With Tunnel Oxide Passivated Back Contact

This paper shows the results and the limitations of a 21% N-Cz 239-cm 2 screen-printed cell with blanket p + emitter and n + back surface field. In addition, we show the properties and impact of tunnel oxide capped with doped n + polysilicon and metal on the back side, which can overcome those limit...

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Bibliographic Details
Published in:IEEE journal of photovoltaics 2016-01, Vol.6 (1), p.153-158
Main Authors: Upadhyaya, Ajay D., Young-Woo Ok, Chang, Elizabeth, Upadhyaya, Vijaykumar, Madani, Keeya, Tate, Keith, Rounsaville, B., Chel-Jong Choi, Chandrasekaran, V., Yelundur, V., Gupta, Atul, Rohatgi, Ajeet
Format: Article
Language:English
Subjects:
Aluminum oxide
Annealing
Contact
Crystalline
Crystallization
Emitters
Metals
n-type
Optimization
Oxides
passivated contact
Photovoltaic cells
poly silicon
Silicon
Solar cells
Temperature
tunnel oxide
Tunneling
Tunnels (transportation)
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Summary:This paper shows the results and the limitations of a 21% N-Cz 239-cm 2 screen-printed cell with blanket p + emitter and n + back surface field. In addition, we show the properties and impact of tunnel oxide capped with doped n + polysilicon and metal on the back side, which can overcome those limitations. Since both the doped n + layer and the metal contact are outside the bulk silicon wafer, the J o is dramatically reduced, resulting in much higher V oc . Process optimization has resulted in high iV oc of 728 mV on symmetric structures. The unmetallized cell structure with Al 2 O 3 /SiN passivated lightly doped p + emitter and a tunnel oxide/n + poly back also gave high iV oc of 734 mV. The finished screen-printed 132-cm 2 device gave a V oc of 683 mV, J sc of 39.4 mA/cm 2 , FF of 77.6%, and an efficiency of 20.9%. Cell analysis show that implementation of a selective emitter can give higher efficiency.
ISSN:2156-3381
2156-3403
DOI:10.1109/JPHOTOV.2015.2496861