Phase Change Memory

In this paper, recent progress of phase change memory (PCM) is reviewed. The electrical and thermal properties of phase change materials are surveyed with a focus on the scalability of the materials and their impact on device design. Innovations in the device structure, memory cell selector, and str...

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Bibliographic Details
Published in:Proceedings of the IEEE 2010-12, Vol.98 (12), p.2201-2227
Main Authors: Wong, H.-S. Philip, Raoux, Simone, Kim, SangBum, Liang, Jiale, Reifenberg, John P., Rajendran, Bipin, Asheghi, Mehdi, Goodson, Kenneth E.
Format: Article
Language:English
Subjects:
Arrays
Chalcogenides
Conductivity
Crystallization
Devices
emerging memory
heat conduction
Materials selection
Multilayers
nonvolatile memory
PCRAM
Phase change
phase change material
Phase change materials
phase change memory (PCM)
PRAM
Resistance
Selectors
Strategy
Switches
thermal physics
Thermal properties
Threshold voltage
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Summary:In this paper, recent progress of phase change memory (PCM) is reviewed. The electrical and thermal properties of phase change materials are surveyed with a focus on the scalability of the materials and their impact on device design. Innovations in the device structure, memory cell selector, and strategies for achieving multibit operation and 3-D, multilayer high-density memory arrays are described. The scaling properties of PCM are illustrated with recent experimental results using special device test structures and novel material synthesis. Factors affecting the reliability of PCM are discussed.
ISSN:0018-9219
1558-2256
DOI:10.1109/JPROC.2010.2070050