Auger effect in GaSb quantum well lasers

The Auger recombination effect in GaSb quantum well lasers is discussed. A formula for the calculation of the CHSH Auger rate in quantum well structures is presented, which can be applied to the material where the bandgap is almost the same as the split-off gap. Using this formula, the quantum effic...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 1985-12, Vol.21 (12), p.1851-1853
Main Authors: Sugimura, A., Patzak, E., Meissner, P.
Format: Article
Language:English
Subjects:
DH-HEMTs
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Gallium arsenide
Gas lasers
Laser theory
Lasers
Optical materials
Optics
Particle scattering
Physics
Quantum well lasers
Radiative recombination
Semiconductor lasers
laser diodes
Threshold current
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Summary:The Auger recombination effect in GaSb quantum well lasers is discussed. A formula for the calculation of the CHSH Auger rate in quantum well structures is presented, which can be applied to the material where the bandgap is almost the same as the split-off gap. Using this formula, the quantum efficiency of the GaSb quantum well laser is calculated and compared to those of conventional double heterostructure lasers. It is found that the quantum efficiency of the GaSb quantum well laser can be improved to values higher than 50 percent in the wavelength range of 1.5-1.8\mu m.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.1985.1072604