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Electroabsorption modulator using intersubband transitions in GaN-AlGaN-AlN step quantum wells
We calculate the high-speed modulation properties of an electroabsorption modulator for lambda=1.55 mum based on Stark shifting an intersubband resonance in GaN-AlGaN-AlN step quantum wells. In a realistic simulation assuming an absorption linewidth Gamma=100 meV we obtain an RC-limited electrical f...
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Published in: | IEEE journal of quantum electronics 2006-08, Vol.42 (8), p.810-819 |
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Main Author: | |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We calculate the high-speed modulation properties of an electroabsorption modulator for lambda=1.55 mum based on Stark shifting an intersubband resonance in GaN-AlGaN-AlN step quantum wells. In a realistic simulation assuming an absorption linewidth Gamma=100 meV we obtain an RC-limited electrical f 3dB ~60 GHz at an applied voltage swing V pp =2.8 V. We also show that a small negative effective chirp parameter suitable for standard single-mode fiber is obtained and that the absorption is virtually unsaturable. The waveguide is proposed to be based on the plasma effect in order to simultaneously achieve a strong confinement of the optical mode, a low series resistance, and lattice-matched cladding and core waveguide layers. Extrapolated results reflecting the decisive dependence of the high-speed performance on the intersubband absorption linewidth Gamma are also given. At the assumed linewidth the modulation speed versus signal power ratio is on a par with existing lumped interband modulators based on the quantum confined Stark effect |
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ISSN: | 0018-9197 1558-1713 1558-1713 |
DOI: | 10.1109/JQE.2006.877297 |