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Electroabsorption modulator using intersubband transitions in GaN-AlGaN-AlN step quantum wells

We calculate the high-speed modulation properties of an electroabsorption modulator for lambda=1.55 mum based on Stark shifting an intersubband resonance in GaN-AlGaN-AlN step quantum wells. In a realistic simulation assuming an absorption linewidth Gamma=100 meV we obtain an RC-limited electrical f...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 2006-08, Vol.42 (8), p.810-819
Main Author: Holmstrom, P.
Format: Article
Language:English
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Summary:We calculate the high-speed modulation properties of an electroabsorption modulator for lambda=1.55 mum based on Stark shifting an intersubband resonance in GaN-AlGaN-AlN step quantum wells. In a realistic simulation assuming an absorption linewidth Gamma=100 meV we obtain an RC-limited electrical f 3dB ~60 GHz at an applied voltage swing V pp =2.8 V. We also show that a small negative effective chirp parameter suitable for standard single-mode fiber is obtained and that the absorption is virtually unsaturable. The waveguide is proposed to be based on the plasma effect in order to simultaneously achieve a strong confinement of the optical mode, a low series resistance, and lattice-matched cladding and core waveguide layers. Extrapolated results reflecting the decisive dependence of the high-speed performance on the intersubband absorption linewidth Gamma are also given. At the assumed linewidth the modulation speed versus signal power ratio is on a par with existing lumped interband modulators based on the quantum confined Stark effect
ISSN:0018-9197
1558-1713
1558-1713
DOI:10.1109/JQE.2006.877297