Lateral Oxidation of AlAs for Circular and Inverted Mesa Saturable Bragg Reflectors

A model of the thermal oxidation kinetics that is based on the continuity equation is adapted to the fabrication of circular saturable Bragg reflector (SBR) mesa structures, as well as inverted mesa array structures. A comparison between theoretical calculations and experimental measurements shows g...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 2013-09, Vol.49 (9), p.731-738
Main Authors: Nabanja, Sheila P., Kolodziejski, Leslie A., Petrich, Gale S.
Format: Article
Language:English
Subjects:
buried oxides
dielectric stacks
Distributed Bragg reflectors
Fabrication
Furnaces
Gallium arsenide
Geometry
lateral oxidation
Mathematical model
Oxidation
semiconductor photonic device fabrication
Semiconductor process modeling
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Summary:A model of the thermal oxidation kinetics that is based on the continuity equation is adapted to the fabrication of circular saturable Bragg reflector (SBR) mesa structures, as well as inverted mesa array structures. A comparison between theoretical calculations and experimental measurements shows good agreement, making the model a useful tool for the controllability of the structure-dependent oxidation process. The model is applied to the wet oxidation of buried AlAs layers for the fabrication of ultra-broadband, high index contrast, III-V/ AlxOy SBRs. The rate of oxidation is found to be dependent not only on the oxidation temperature, but also on oxidation time, mesa geometry, and AlAs layer thickness. The two distinct large-area SBR structures, the circular mesa and the inverted mesa, are fabricated.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2013.2268536