Fabrication and Characterization of Active-Matrix 960\times540 Blue GaN-Based Micro-LED Display

• Published in: IEEE journal of quantum electronics 2019-04, Vol.55 (2), p.1-6
• Main Authors: Chen, Chien-Ju, Chen, Hong-Chun, Liao, Jyun-Hao, Yu, Chia-Jui, Wu, Meng-Chyi
• Format: Article
• Language: English
• Subjects: active matrix; Current measurement; Electrical resistance measurement; flip chip; GaN; Indium tin oxide; Leakage currents; Light emitting diodes; Micro-display; micro-LED; pixels per inch; Resistance; Transmission line measurements
• ISSN: 0018-9197; 1558-1713
• DOI: 10.1109/JQE.2019.2900540

In this paper, we demonstrate a high-resolution 960\times 540 blue-emitting active matrix micro-display. The blue micro-display have a diagonal length of 0.55 inch, a pixel size of 8~\mu \text{m} with a pixel pitch of 12.8~\mu \text{m} , and high pixel density of 2000 pixels per inch. The single pixel of micro-display exhibits excellent characteristics including an extremely low-leakage current of 0.1 pA at −5 V, a low forward voltage of 2.73 V, a narrow full width at half maximum of 15.7 nm of electroluminescence spectra, a high external quantum efficiency of 13.3%, and a deep-blue emission with CIE coordinates of (0.1589, 0.0542) at 11~\mu \text{A} . Besides, the single pixel of micro-LED also shows high brightness of 4.2 \times 10^{6} and 7.4 \times 10^{6} cd/m 2 at 500~\mu \text{A} and 1 mA, respectively. The complete 960\times 540 micro-display has a contrast ratio of 3600000:1, the power consumption with all on is 0.5 W, and the pixel yield rate of about 98.674% analyzed by the software ImageJ.