The Importance of p-Doping for Quantum Dot Laser on Silicon Performance

p -type modulation doping of the quantum dot active region is known to improve high temperature and dynamic performance of quantum dot lasers. These improvements are critical to realizing commercially relevant quantum dot devices on silicon and are shown to enable continuous wave operation over 100°...

Full description

Saved in:
Bibliographic Details
Published in:IEEE journal of quantum electronics 2019-12, Vol.55 (6), p.1-11
Main Authors: Norman, Justin C., Zhang, Zeyu, Jung, Daehwan, Shang, Chen, Kennedy, MJ, Dumont, Mario, Herrick, Robert W., Gossard, Arthur C., Bowers, John E.
Format: Article
Language:English
Subjects:
Active regions (lasers)
Continuous radiation
Doping
ENGINEERING
High temperature
Integrated Optoelectronics
Modulation
Modulation doping
Optical feedback
Optics
Performance evaluation
Photonics
Physics
Quantum dot lasers
Quantum Dots
Semiconductor Lasers
Silicon
Substrates
Temperature
Temperature measurement
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:p -type modulation doping of the quantum dot active region is known to improve high temperature and dynamic performance of quantum dot lasers. These improvements are critical to realizing commercially relevant quantum dot devices on silicon and are shown to enable continuous wave operation over 100°C, nearly complete insensitivity to optical feedback, and orders of magnitude improvement in device reliability relative to unintentionally doped active regions. Also described is a spectrally resolved analysis of the effect of p-modulation doping on the optical gain revealing anomalous behavior that explains the high characteristic temperatures commonly observed in literature for similar devices on native substrate.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2019.2941579